THERMAL REDISTRIBUTION OF INDIUM IN AMORPHOUS-SILICON LAYERS

[1] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 173 - 182

[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] Kendall D. L., 1969, Semiconductor silicon, P358

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &

[9] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 207 - 217

[10] NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 829 - 831

[1] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 173 - 182

[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] Kendall D. L., 1969, Semiconductor silicon, P358

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &

[9] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 207 - 217

[10] NEAR-SURFACE REGROWTH RATE EFFECTS IN HIGH-DOSE ION-IMPLANTED (100) SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 829 - 831