OBSERVATION OF GAS-ABSORPTION IN EVAPORATED AMORPHOUS-SILICON FILMS USING SECONDARY ION MASS-SPECTROMETRY

被引：21

作者：

MAGEE, CW ^{[1
]}

BEAN, JC ^{[1
]}

FOTI, G ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

THIN SOLID FILMS | 1981年 / 81卷 / 01期

关键词：

D O I：

10.1016/0040-6090(81)90496-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 6

页数：6

共 19 条

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 59 - 61
[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY
BECKER, GE
BEAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399
[3] OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS
DONOVAN, TM
SPICER, WE
BENNETT, JM
ASHLEY, EJ
[J]. PHYSICAL REVIEW B, 1970, 2 (02): : 397 - &
[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE
DONOVAN, TM
HEINEMAN.K
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &
[5] EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON
FOTI, G
BEAN, JC
POATE, JM
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 840 - 842
[6] HYDROGEN-ION IMPLANTATION PROFILES AS DETERMINED BY SIMS
MAGEE, CW
WU, CP
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 529 - 533
[7] SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION
MAGEE, CW
HARRINGTON, WL
HONIG, RE
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) : 477 - 485
[8] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM
MAGEE, CW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 660 - 663
[9] MICROPOROSITY INDUCED BY NUCLEATION AND GROWTH PROCESSES IN CRYSTALLINE AND NON-CRYSTALLINE FILMS
NAKAHARA, S
[J]. THIN SOLID FILMS, 1977, 45 (03) : 421 - 432
[10] DEPENDENCE OF STRUCTURE OF AMORPHOUS GERMANIUM FILMS ON ANGLE OF EVAPORATION
ORLOWSKI, BA
SPICER, WE
[J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (08) : 793 - &

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