ION-BEAM-ASSISTED DEPOSITION OF TIN THIN-FILMS

被引：6

作者：

KUBOTA, H

CHEN, JS

NAGATA, M

KOLAWA, E

NICOLET, MA

机构：

[1] CALTECH,PASADENA,CA 91125

[2] KUMAMOTO IND RES INST,KUMAMOTO 862,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 08期

关键词：

ION-BEAM-ASSISTED DEPOSITION; TIN; TITANIUM NITRIDE; ION BEAM; B1; NITRIDE; TEM; EXPERIMENT;

D O I：

10.1143/JJAP.32.3414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray diffraction and transmission electron analyses are used to investigate changes in the microstructure that occur when TiN films are grown by sequential deposition and irradiation on unheated Si substrates. A N2-Ar gas mixture serves partly for the reactive sputter deposition of TiN from Ti in a rf magnetron target and partly for the generation of a broad ion beam in a Kaufman source. When analyzed in terms of a simple model, the data suggest the existence of a critical growth rate of two [111] bilayers of TiN per deposition-irradiation cycle. Below that rate, the columnar growth microstructure changes into a granular one with azimuthal texture.

引用

收藏

页码：3414 / 3419

页数：6

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