OPERATION OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS OF 3C-SIC UP TO 400-DEGREES-C

被引:26
作者
DAIMON, H
YAMANAKA, M
SHINOHARA, M
SAKUMA, E
MISAWA, S
ENDO, K
YOSHIDA, S
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D O I
10.1063/1.99010
中图分类号
O59 [应用物理学];
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页码:2106 / 2108
页数:3
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