THERMOCHEMISTRY OF ALKYLARSINE COMPOUNDS USED AS ARSENIC PRECURSORS IN METALORGANIC VAPOR-PHASE EPITAXY

被引：23

作者：

LUM, RM

KLINGERT, JK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3820 / 3823

页数：4

共 14 条

[1]

BUCKLEY DN, 1989, MATERIALS RES SOC A, V145

[2] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].

DENBAARS, SP ;

MAA, BY ;

DAPKUS, PD ;

DANNER, AD ;

LEE, HC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193

[3] AN EXAMINATION OF ORGANOMETALLIC THERMAL-STABILITY AND ITS RELEVANCE TO LOW-TEMPERATURE MOCVD GROWTH OF HGCDTE [J].

HOKE, WE ;

LEMONIAS, PJ ;

KORENSTEIN, R .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (02) :329-334

[4] GAAS GROWTH USING TERTIARYBUTYLARSINE AND TRIMETHYLGALLIUM [J].

LARSEN, CA ;

BUCHAN, NI ;

LI, SH ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :15-19

[5] REACTION-MECHANISMS IN THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

LARSEN, CA ;

BUCHAN, NI ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :480-482

[6] INSITU MASS-SPECTROSCOPY STUDIES OF THE DECOMPOSITION OF ORGANOMETALLIC ARSENIC COMPOUNDS IN THE PRESENCE OF GA(CH3)3 AND GA(C2H5)3 [J].

LEE, PW ;

OMSTEAD, TR ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :134-142

[7] INSITU MASS-SPECTROSCOPY AND THERMOGRAVIMETRIC STUDIES OF GAAS MOCVD GAS-PHASE AND SURFACE-REACTIONS [J].

LEE, PW ;

OMSTEAD, TR ;

MCKENNA, DR ;

JENSEN, KF .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :165-174

[8]

Leys M. R., 1987, Chemtronics, V2, P155

[9] CARS INSITU DIAGNOSTICS IN MOVPE - THE THERMAL-DECOMPOSITION OF ASH3 AND PH3 [J].

LUCKERATH, R ;

TOMMACK, P ;

HERTLING, A ;

KOSS, HJ ;

BALK, P ;

JENSEN, KF ;

RICHTER, W .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :151-158

[10] EFFECTS OF METHYLARSINE HOMOLOGS (CH3)NASH3-N ON THE METALORGANIC VAPOR-PHASE EPITAXY OF GAAS [J].

LUM, RM ;

KLINGERT, JK ;

KISKER, DW .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :652-655

← 1 2 →