CONTROLLING PLASTIC RELAXATION USING GRADED SUPERLATTICE BUFFER LAYERS

被引：3

作者：

VILLAFLOR, AB

KIMATA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L496 / L499

页数：4

共 8 条

[1] MOLECULAR-BEAM EPITAXY OF GASB AND INGASB [J].

KODAMA, M ;

KIMATA, M .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :641-645

[2] GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

MAREE, PMJ ;

BARBOUR, JC ;

VANDERVEEN, JF ;

KAVANAGH, KL ;

BULLELIEUWMA, CWT ;

VIEGERS, MPA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420

[3] REDUCTION OF DISLOCATION DENSITY IN GAAS/SI BY STRAINED-LAYER SUPERLATTICE OF INXGA1-XAS-GAASYP1-Y [J].

NISHIMURA, T ;

MIZUGUCHI, K ;

HAYAFUJI, N ;

MUROTANI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1141-L1143

[4] ROOM-TEMPERATURE CW-OPERATION OF GASB/ALGASB MQW LASER-DIODES GROWN BY MBE [J].

OHMORI, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L657-L660

[5] REDUCTION OF DISLOCATION DENSITIES IN HETEROEPITAXIAL III-V VPE SEMICONDUCTORS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

BUIOCCHI, CJ ;

ZAMEROWSKI, TJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1643-1646

[6] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J].

ORDERS, PJ ;

USHER, BF .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :980-982

[7] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

MILLER, RC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :217-219

[8] X-RAY DIFFRACTION FROM ONE-DIMENSIONAL SUPERLATTICES IN GAAS1-XPX CRYSTALS [J].

SEGMULLER, A ;

BLAKESLEE, AE .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (FEB1) :19-25

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