THE FABRICATION OF THIN, FREESTANDING, SINGLE-CRYSTAL, SEMICONDUCTOR MEMBRANES

被引:22
作者
LEE, KC
机构
[1] National Institutes of Standards and Technology, Electricity Division, Gaithersburg
关键词
D O I
10.1149/1.2086988
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Freestanding, single-crystal, semiconductor membranes with thicknesses in the range of a few tens of nanometers to tens of microns are of increasing technological interest today. Their applications range from high speed electronic devices to electromechanical devices and pressure sensors. This review paper identifies two general classes of techniques for producing such thin membranes: dissolution of single-crystal wafers, and direct growth of single-crystal membranes. Numerous specific techniques in each general class are discussed. The discussion of each technique includes a brief explanation of the reason why it works, a description of the actual experimental implementation, an analysis of the range of thickness that can be produced, and the crystalline and electrical quality of the membranes. Unusual difficulties with implementing a technique, or special advantages of a technique are also noted. Since this review is intended to aid in the selection of a technique for producing thin semiconductor membranes when one has a particular application in mind, note is made of those applications for which the membranes produced with each technique are particularly well suited. © 1990, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:2556 / 2574
页数:19
相关论文
共 115 条
[41]   AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES [J].
JACKSON, TN ;
TISCHLER, MA ;
WISE, KD .
ELECTRON DEVICE LETTERS, 1981, 2 (02) :44-45
[42]  
JAMES HM, 1951, Z PHYS CHEM, V198, P107
[43]   MINIATURE CANTILEVER BEAMS FABRICATED BY ANISOTROPIC ETCHING OF SILICON [J].
JOLLY, RD ;
MULLER, RS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2750-2754
[44]   DIFFUSION IN THIN SILICON FILMS FORMED BY ELECTROCHEMICAL ETCHING [J].
KAMINS, TI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :286-288
[45]   MICROMACHINING OF SILICON MECHANICAL STRUCTURES [J].
KAMINSKY, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1015-1024
[46]   VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS [J].
KENDALL, DL .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 :373-403
[47]  
KERN W, 1978, RCA REV, V39, P278
[48]  
KERN W, 1987, CHEM SEMICONDUCTOR I, P255
[49]   STUDY OF ELECTROCHEMICAL ETCH-STOP FOR HIGH-PRECISION THICKNESS CONTROL OF SILICON MEMBRANES [J].
KLOECK, B ;
COLLINS, SD ;
DEROOIJ, NF ;
SMITH, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :663-669
[50]  
KORYTA J, 1987, PRINCIPLES ELECTROCH, P364