SUPPRESSION OF INP SUBSTRATE DEGRADATION BY HYDROGEN PLASMA CAUSED BY THE PRESENCE OF PHOSPHORUS VAPOR

被引：19

作者：

SCHUTZ, R ^{[1
]}

MATSUSHITA, K ^{[1
]}

HARTNAGEL, HL ^{[1
]}

LONGERE, JY ^{[1
]}

KRAWCZYK, SK ^{[1
]}

机构：

[1] ECOLE CENT LYON,ELECTR LAB,CNRS,UA 848,F-69131 ECULLY,FRANCE

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 09期

关键词：

Indium compound; Semiconductor devices and materials; Substrate;

D O I：

10.1049/el:19900369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that the degradation of InP substrates in a hydrogen plasma can be prevented by the introduction of phosphorus vapour into the reaction chamber. The results obtained, using standard surface analysis techniques and photoluminescence depth profiling, indicate that the stoichiometry of the InP surface region can be preserved and the number of P-vacancies which diffuse into the bulk drastically reduced. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：564 / 566

页数：3

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