WORK FUNCTION DIFFERENCE IN THE AL-SIO2-SI SYSTEM WITH REACTIVELY SPUTTERED SIO2

被引：9

作者：

HABERLE, K ^{[1
]}

FROSCHLE, E ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST SEMICONDUCTOR ELECTR, SFB 56 FESTKORPERELEKTR, D-5100 AACHEN, GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 05期

关键词：

FET's; oxtde charge densities; semiconductors;

D O I：

10.1149/1.2129160

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：878 / 880

页数：3

共 22 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[2] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J].

ARNOLD, E ;

LADELL, J ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :413-+

[3]

AUER PP, 1974, JPN J APPL PHYS, P397

[4] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

CASTRO, PL ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :280-+

[5] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[7] RELATIONSHIP BETWEEN ATOMIC STRUCTURE AND ELECTRONIC PROPERTIES OF (111) SURFACES OF SILICON [J].

ERBUDAK, M ;

FISCHER, TE .

PHYSICAL REVIEW LETTERS, 1972, 29 (11) :732-&

[8]

GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[9] PHOTOEMISSION OF ELECTRONS FROM METALS INTO SILICON DIOXIDE [J].

GOODMAN, AM ;

ONEILL, JJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3580-&

[10] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 152 (02) :785-+

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