TITANIUM SILICIDE GROWTH BY RAPID-THERMAL PROCESSING OF TI FILMS DEPOSITED ON LIGHTLY DOPED AND HEAVILY DOPED SILICON SUBSTRATES

被引：11

作者：

DELANEROLLE, N

HOFFMAN, D

MA, D

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1689 / 1695

页数：7

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[1] ADAMS ED, 1985, J VAC SCI TECHNOL A, V3, P2265
[2] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
[3] SELF-ALIGNED TI SILICIDE FORMED BY RAPID THERMAL ANNEALING
BRAT, T
OSBURN, CM
FINSTAD, T
LIU, J
ELLINGTON, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1451 - 1458
[4] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM
DELFINO, M
BROADBENT, EK
MORGAN, AE
BURROW, BJ
NORCOTT, MH
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593
[5] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES
HAKEN, RA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663
[6] KERMANI A, 1987, P MATERIALS RES SO A, V74
[7] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[8] MITRA UN, 1986, 5TH P INT S SIL MAT
[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
MURARKA, SP
FRASER, DB
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 342 - 349
[10] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES
MURARKA, SP
READ, MH
DOHERTY, CJ
FRASER, DB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 293 - 301