PLANARIZED SOLID-STATE EPITAXIAL-GROWTH OF SI AND ITS EFFECT ON SCHOTTKY-BARRIER DIODES

被引：2

作者：

REITH, TM

SULLIVAN, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：177 / 179

页数：3

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[11] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1.
OTTAVIAN.G
SIGURD, D
MARRELLO, V
MAYER, JW
MCCALDIN, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1730 - 1739
[12] ELECTRICAL EFFECT ON SCHOTTKY-BARRIER DIODES OF SI CRYSTALLIZATION FROM AL-SI METAL-FILMS
REITH, TM
SCHICK, JD
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 524 - 526
[13] AGING EFFECTS IN SI-DOPED AL SCHOTTKY-BARRIER DIODES
REITH, TM
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (03) : 152 - 154
[14] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION
SANKUR, H
MCCALDIN, JO
DEVANEY, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 64 - 66
[15] SCHICK JD, UNPUBLISHED
[16] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .2.
SIGURD, D
OTTAVIAN.G
ARNAL, HJ
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1740 - 1745