THROUGH-WAFER VIA FABRICATION IN GALLIUM-ARSENIDE BY EXCIMER-LASER PROJECTION PATTERNED ETCHING

被引：12

作者：

FOULON, F

GREEN, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 05期

关键词：

D O I：

10.1116/1.586490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through-wafer vias, in high density, can be fabricated in GaAs by excimer laser projection patterned etching in a chlorine atmosphere. The via, if circular of diameter (B), decreases in diameter (A) with depth (W), according to the relation A almost-equal-to B-0.65W. This corresponds to a sidewall slope of approximately 18-degrees. Etch rates up to 3 mum/min using a 20 Hz laser (248 nm) have been obtained, with good sidewall quality; the technique would appear to be suitable as a manufacturing method.

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页码：1854 / 1858

页数：5

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