TAPERED WINDOWS IN SIO2, SI3N4, AND POLYSILICON LAYERS BY ION-IMPLANTATION

被引：4

作者：

GOTZLICH, J

RYSSEL, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127469

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：617 / 619

页数：3

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