PROCESSES FOR MULTILEVEL METALLIZATION

被引：53

作者：

VOSSEN, JL ^{[1
]}

SCHNABLE, GL ^{[1
]}

KERN, W ^{[1
]}

机构：

[1] RCA CORP, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 01期

关键词：

D O I：

10.1116/1.1318662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：60 / 70

页数：11

相关论文

共 124 条

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[2] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS
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[7] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS
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[8] ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 880 - +
[9] STUDY OF FAILURE MECHANISMS IN AL-CU THIN FILMS BY HIGH-VOLTAGE ELECTRON MICROSCOPY
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[J]. APPLIED PHYSICS LETTERS, 1971, 18 (07) : 284 - +
[10] EFFECT OF OXYGEN ON ELECTROMIGRATION BEHAVIOR OF AL THIN-FILMS
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[J]. APPLIED PHYSICS LETTERS, 1972, 20 (11) : 434 - +

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