APPLICATION OF E-BEAM RECRYSTALLIZATION TO 3-LAYER IMAGE-PROCESSOR FABRICATION

被引：4

作者：

HAZAMA, H

TAKAHASHI, M

KAMBAYASHI, S

KEMMOCHI, M

TSUCHIYA, K

IIDA, Y

YANO, K

INOUE, T

YOSHIMI, M

YOSHII, T

TANGO, H

机构：

[1] ULSI Research Center, Toshiba Corporation, Saiwaiku, Kawasaki 210, 1, Komukai Toshiba-cho

[2] ULSI Research Center, Toshiba Corporation, Kawasaki 210, 1, Komukai Toshiba-cho Saiwaiku

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期

关键词：

D O I：

10.1109/16.65735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

E-beam recrystallization has been applied for the first time to fabricate a three-layer image processor. The seed structure as well as the E-beam conditions were successfully optimized so that a large-area SOI as wide as 1 mm was recrystallized without void generation nor causing damage in the underlying devices. The actual SOI area in the device, 850 x 1100 μm, was recrystallized with one E-beam scan by aligning its position. The three-layer image processor was capable of visual image sensing with a feature outline extraction in a parallel processing manner. Normal operations of the fundamental functions have been confirmed, demonstrating the feasibility of E-beam recrystallization to three-dimensional (3D) IC application. © 1991 IEEE

引用

页码：47 / 54

页数：8

共 29 条

[1] 3-DIMENSIONAL IC TRENDS [J].

AKASAKA, Y .

PROCEEDINGS OF THE IEEE, 1986, 74 (12) :1703-1714

[2] RECRYSTALLIZATION OF CVD POLY-SI ON INSULATOR BY DUAL ELECTRON-BEAM PROCESSING [J].

DAVIS, JR ;

MCMAHON, RA ;

AHMED, H .

ELECTRONICS LETTERS, 1982, 18 (04) :163-164

[3] CHARACTERIZATION OF THE DUAL E-BEAM TECHNIQUE FOR RECRYSTALLIZING POLYSILICON FILMS [J].

DAVIS, JR ;

MCMAHON, RA ;

AHMED, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1919-1924

[4] MULTILEVEL CONSTRUCTION OF SEEDED-LATERALLY EPITAXIAL SILICON FILMS ON INSULATOR [J].

HAMASAKI, T ;

INOUE, T ;

YOSHIMI, M ;

YOSHII, T ;

TANGO, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (01) :126-130

[5] HIGHLY CONTROLLABLE PSEUDOLINE ELECTRON-BEAM RECRYSTALLIZATION OF SILICON ON INSULATOR [J].

HAMASAKI, T ;

INOUE, T ;

HIGASHINAKAGAWA, I ;

YOSHII, T ;

TANGO, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2971-2976

[6]

HAMASAKI T, 1986, 18TH C SOL STAT DEV, P569

[7] LATERALLY SEEDED REGROWTH OF SILICON OVER SIO2 THROUGH STRIP ELECTRON-BEAM IRRADIATION [J].

HAYAFUJI, Y ;

YANADA, T ;

USUI, S ;

KAWADO, S ;

SHIBATA, A ;

WATANABE, N ;

KIKUCHI, M ;

WILLIAMS, KE .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :473-475

[8]

Hirose S., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P34

[9] CONSIDERATION ON THE VOID GENERATION MECHANISM IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS [J].

HORITA, S ;

ISHIWARA, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2057-2063

[10] PERFORATION SEED STRUCTURE IN ELECTRON-BEAM RECRYSTALLIZED SILICON-ON-INSULATOR FILMS [J].

HORITA, S ;

ISHIWARA, H .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :748-750

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