UNDERSTANDING OF THE HOT CARRIER DEGRADATION BEHAVIOR OF MOSFETS BY MEANS OF THE CHARGE PUMPING TECHNIQUE

被引：4

作者：

MAES, HE

GROESENEKEN, G

HEREMANS, P

BELLENS, R

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90469-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：523 / 534

页数：12

共 20 条

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[2]

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[3] CHARGE PUMPING IN MOS DEVICES [J].

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JESPERS, PGA .

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[4]

Chan T. Y., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P196, DOI 10.1109/IEDM.1988.32789

[5] EFFECT OF OXIDE FIELD ON HOT-CARRIER-INDUCED DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

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KO, PK ;

HU, C .

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[6]

GROESENEIKEN G, 1983, INSULATING FILMS SEM, V3, P153

[7] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[8] EVALUATION OF CHANNEL HOT CARRIER EFFECTS IN N-MOS TRANSISTORS AT 77-K WITH THE CHARGE PUMPING TECHNIQUE [J].

HEREMANS, P ;

SUN, YC ;

GROESENEKEN, G ;

MAES, HE .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :313-318

[9] CONSISTENT MODEL FOR THE HOT-CARRIER DEGRADATION IN N-CHANNEL AND P-CHANNEL MOSFETS [J].

HEREMANS, P ;

BELLENS, R ;

GROESENEKEN, G ;

MAES, HE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2194-2209

[10]

HEREMANS P, 1989, UNPUB IEEE T ELECTRO

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