DEVELOPMENTS IN BROAD-BEAM, ION-SOURCE TECHNOLOGY AND APPLICATIONS

被引:18
作者
KAUFMAN, HR [1 ]
HARPER, JME [1 ]
CUOMO, JJ [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 03期
关键词
D O I
10.1116/1.571822
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:764 / 767
页数:4
相关论文
共 18 条
  • [1] AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY
    ASPNES, DE
    STUDNA, AA
    [J]. SURFACE SCIENCE, 1980, 96 (1-3) : 294 - 306
  • [2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
    BEAN, JC
    BECKER, GE
    PETROFF, PM
    SEIDEL, TE
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
  • [3] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION
    CUOMO, JJ
    HARPER, JME
    GUARNIERI, CR
    YEE, DS
    ATTANASIO, LJ
    ANGILELLO, J
    WU, CT
    HAMMOND, RH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354
  • [4] SOME TRENDS IN PREPARING FILM STRUCTURES BY ION-BEAM METHODS
    GAUTHERIN, G
    WEISSMANTEL, C
    [J]. THIN SOLID FILMS, 1978, 50 (MAY) : 135 - 144
  • [5] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554
  • [6] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS
    HARPER, JME
    CUOMO, JJ
    KAUFMAN, HR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 737 - 756
  • [7] EFFECT OF ION IRRADIATION ON ADHERENCE OF GERMANIUM FILMS
    HIRSCH, EH
    VARGA, IK
    [J]. THIN SOLID FILMS, 1978, 52 (03) : 445 - 452
  • [8] MODIFICATION OF EVAPORATED CHROMIUM BY CONCURRENT ION-BOMBARDMENT
    HOFFMAN, DW
    GAERTTNER, MR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 425 - 428
  • [9] KAUFMAN H, UNPUB
  • [10] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .1. ION-SOURCE TECHNOLOGY
    KAUFMAN, HR
    CUOMO, JJ
    HARPER, JME
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 725 - 736