ION-IMPLANTATION OF TI INTO FE IN THE PRESENCE OF RESIDUAL AND BACKFILLED GASES

被引:8
作者
HOFFMANN, B
BAUMANN, H
RAUCH, F
BETHGE, K
机构
关键词
D O I
10.1016/0168-583X(87)90173-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:336 / 343
页数:8
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共 38 条
[21]   OXYGEN-INDUCED SEGREGATION OF HYDROGEN ON A MAGNESIUM SURFACE OBSERVED BY TIME-OF-FLIGHT ANALYSIS OF DIRECT RECOILS [J].
MINTZ, MH ;
SCHULTZ, JA ;
RABALAIS, JW .
PHYSICAL REVIEW LETTERS, 1983, 51 (18) :1676-1679
[22]   ION-BEAM-INDUCED MIGRATION AND ITS EFFECT ON CONCENTRATION PROFILES [J].
MYERS, SM .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :265-274
[23]  
RAUCH F, 1981, ANAL NONMETALS METAL, P151
[24]   OXYGEN EXPOSURE EFFECT ON SPUTTERING YIELD AND ANGULAR-DISTRIBUTION FOR LIGHT-ION IRRADIATION OF POLYCRYSTALLINE MOLYBDENUM [J].
SAIDOH, M ;
BAY, HL ;
BOHDANSKY, J ;
ROTH, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) :403-407
[25]   INSITU PROTON-INDUCED X-RAY-EMISSION AND AUGER-ELECTRON SPECTROSCOPY STUDY OF TITANIUM AND NIOBIUM IMPLANTATION OF IRON FILMS [J].
SARTWELL, BD ;
BALDWIN, DA .
MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (02) :539-547
[26]   MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J].
SCHULZ, F ;
WITTMAACK, K .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :31-40
[27]   THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J].
SIGMUND, P .
PHYSICAL REVIEW, 1969, 184 (02) :383-+
[28]   ABSORPTION OF CARBON FROM RESIDUAL GASES DURING TI IMPLANTATION OF ALLOYS [J].
SINGER, IL ;
BARLAK, TM .
APPLIED PHYSICS LETTERS, 1983, 43 (05) :457-459
[29]   COMPOSITIONS OF METALS IMPLANTED TO VERY HIGH FLUENCES [J].
SINGER, IL .
VACUUM, 1984, 34 (10-1) :853-859
[30]   FRICTION BEHAVIOR OF 52100 STEEL MODIFIED BY ION-IMPLANTED TI [J].
SINGER, IL ;
CAROSELLA, CA ;
REED, JR .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :923-932