SHORTEST WAVELENGTH (607 NM) OPERATIONS OF GAINP/AIINP DISTRIBUTED BRAGG REFLECTOR LASERS

被引：14

作者：

JANG, DH

KANEKO, Y

KISHINO, K

机构：

[1] SOPHIA UNIV,DEPT ELECT & ELECTR ENGN,7-1 KIOI CHO,CHIYODA KU,TOKYO 102,JAPAN

[2] ELECTR & TELECOMMUN RES INST,OPTOELECTR SECT,TAEJON,SOUTH KOREA

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 04期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Visible light GaInP/AlInP distributed Bragg reflector (DBR) lasers with second order gratings (184.7 nm period) were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional interference method for the first time. Single mode operations of GaInP/AlInP DBR lasers were maintained up to over 1.8 times the threshold currents with a wavelength of 607nm at 140K and a wavelength shift of 0.033nm/K. No mode hopping was observed in a temperature range from 120 to 165K.

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收藏

页码：428 / 430

页数：3

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