LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS BY PHOTOINDUCED DECOMPOSITION OF TETRAETHOXYSILANE

被引：8

作者：

NIWANO, M ^{[1
]}

HIRANO, S ^{[1
]}

SUEMITSU, M ^{[1
]}

HONMA, K ^{[1
]}

MIYAMOTO, N ^{[1
]}

机构：

[1] CHEMITRON CO LTD, HIGASHI YAMATO, TOKYO 189, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 07期

关键词：

D O I：

10.1143/JJAP.28.L1310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1310 / L1313

页数：4

共 10 条

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