SELECTIVE PLASMA OXIDATION OF GAAS - A STUDY OF THE INTERFACE PROPERTIES

被引：2

作者：

CHANG, RPH

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：483 / 487

页数：5

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共 15 条

[1] PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
CHANG, RPH
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 481 - 487
[2] PHYSICAL-PROPERTIES OF PLASMA-GROWN GAAS OXIDES
CHANG, RPH
POLAK, AJ
ALLARA, DL
CHANG, CC
LANFORD, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 888 - 895
[3] SOME PROPERTIES OF PLASMA-GROWN GAAS OXIDES
CHANG, RPH
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 89 - 106
[4] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[5] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS
CHANG, RPH
COLEMAN, JJ
POLAK, AJ
FELDMAN, LC
CHANG, CC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238
[6] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING
CHANG, RPH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280
[7] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES
CHANG, RPH
SHENG, TT
CHANG, CC
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 341 - 342
[8] GOURRIER S, 1978, 4TH P INT S PLASM CH
[9] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS
KAUFFMAN, RL
FELDMAN, LC
POATE, JM
CHANG, RPH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 319 - 321
[10] GAAS MICROWAVE MOSFETS
MIMURA, T
ODANI, K
YOKOYAMA, N
NAKAYAMA, Y
FUKUTA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 573 - 579