CHARACTERIZATION OF THE DX CENTERS IN ALGAAS-SI BY ADMITTANCE SPECTROSCOPY

被引：15

作者：

DUENAS, S ^{[1
]}

IZPURA, I ^{[1
]}

ARIAS, J ^{[1
]}

ENRIQUEZ, L ^{[1
]}

BARBOLLA, J ^{[1
]}

机构：

[1] UNIV POLITECN MADRID,ETSI TELECOMUN,DEPT INGN ELECTR,E-28040 MADRID,SPAIN

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.348403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we have applied the admittance spectroscopy technique to characterize the DX centers in Al(x)Ga(1-x)As alloys doped with silicon. Our experimental results reveal the existence of two DX centers related to silicon in Al(x)Ga(1-x)As alloys, named DX-I and DX-II centers, with thermal activation energies of 0.370 and 0.415 eV, respectively. These values are lower than those obtained by other authors using capacitance techniques. To explain this disagreement it should be noticed that capacitance techniques can be affected by the nonexponential behavior of the thermal emission transients of the DX centers in Al(x)Ga(1-x)As alloys.

引用

页码：4300 / 4305

页数：6

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