EFFECT OF THE CAPTURE COEFFICIENT IN DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS

被引:15
作者
LANDSBERG, PT [1 ]
SHABAN, EH [1 ]
机构
[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
关键词
D O I
10.1063/1.338329
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:5055 / 5061
页数:7
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共 25 条
[1]   THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837
[2]   THEORY OF DECAY OF EXCESS CARRIER CONCENTRATIONS IN SEMICONDUCTORS [J].
EVANS, DA ;
LANDSBERG, PT .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) :315-+
[3]   A STEADY-STATE CONSTANT CAPACITANCE METHOD FOR THE CHARACTERIZATION OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].
GRIMMEISS, HG ;
KULLENDORFF, N .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5852-5854
[4]   SPECTRAL DISTRIBUTION OF PHOTOIONIZATION CROSS-SECTIONS BY PHOTOCONDUCTIVITY MEASUREMENTS [J].
GRIMMEISS, HG ;
LEDEBO, LA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2155-2162
[5]   FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].
GRIMMEISS, HG ;
OVREN, C .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09) :1032-1042
[6]  
GRIMMEISS HG, 1964, J APPL PHYS, V40, P2526
[7]   GENERATION-RECOMBINATION NOISE AND DEFECT LEVELS IN SEMICONDUCTING CDSE CRYSTALS [J].
HOFFMANN, HJ ;
HUBER, E .
PHYSICA B & C, 1981, 111 (2-3) :249-256
[8]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[9]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[10]   FIELD-DEPENDENCE OF CAPTURE AND RE-EMISSION OF CHARGE-CARRIERS BY SHALLOW LEVELS IN GERMANIUM AND SILICON [J].
MARTINI, M ;
MCMATH, TA .
SOLID-STATE ELECTRONICS, 1973, 16 (02) :129-&