BURIED OXIDE FORMATION IN SI BY HIGH-DOSE IMPLANTATION OF OXYGEN

被引：14

作者：

VANOMMEN, AH

VIEGERS, MPA

机构：

[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

CRYSTALS - Microstructure - MICROSCOPIC EXAMINATION - OXYGEN;

D O I：

10.1016/0169-4332(87)90115-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of a buried oxide film in Si by high-dose implantation of oxygen and subsequent annealing has been studied. It has been shown that this method can render good quality silicon-on-insulator with a dislocation density lower than 10**5 cm** minus **2 and sharp interfaces. The microstructure after annealing was demonstrated to depend strongly on that in the as-implanted state. Silicon point defects have been argued to play an important role in the determination of the microstructure.

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收藏

页码：383 / 389

页数：7

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