THE NATURE OF INTRINSIC HOLE TRAPS IN THERMAL SILICON DIOXIDE

被引：24

作者：

MANCHANDA, L

VASI, J

BHATTACHARYYA, AB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.329352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4690 / 4696

页数：7

共 29 条

[1] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[2] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

GROVE, AS ;

SNOW, EH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+

[3]

DEAL BE, 1977, 3 P INT S SIL MAT SC

[4] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J].

DIMARIA, DJ ;

WEINBERG, ZA ;

AITKEN, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :898-906

[5]

DIMARIA DJ, 1978, PHYSICS SIO2 ITS INT

[6] ORIGIN OF FIXED CHARGE IN THERMALLY OXIDIZED SILICON [J].

GORONKIN, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :314-317

[7] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J].

GWYN, CW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4886-+

[8] POSITIVE CHARGE TRAPS IN SILICON DIOXIDE FILMS - COMPARISON OF POPULATION BY X-RAYS AND BAND-GAP LIGHT [J].

HOLMESSIEDLE, AG ;

GROOMBRIDGE, I .

THIN SOLID FILMS, 1975, 27 (01) :165-170

[9] SATURATION RADIATION EFFECTS IN MOS DEVICES [J].

HOLMSTROM, FE ;

CHURCHILL, JN ;

COLLINS, TW .

SOLID-STATE ELECTRONICS, 1978, 21 (06) :915-917

[10]

HUGHES GW, 1979, SOLID STATE TECHNOL, V22, P70

← 1 2 3 →