DISRUPTION, ATOM DISTRIBUTIONS, AND ENERGY-LEVELS FOR GE/GAAS(110), GE/INP(110), AND GE/INSB(110) HETEROJUNCTIONS

被引：12

作者：

ALDAO, CM

VITOMIROV, IM

XU, F

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.40.3711

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3711 / 3719

页数：9

相关论文

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