HIGH-SPEED PULLING OF GAAS SINGLE-CRYSTAL USING THE MAGNETIC-FIELD APPLIED LEC TECHNIQUE

被引：2

作者：

KIMURA, T ^{[1
]}

OBOKATA, T ^{[1
]}

FUKUDA, T ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 84卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90266-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：394 / 398

页数：5

共 14 条

[1]

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[3]

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[4] INFLUENCE OF MELT COMPOSITION ON THE LONGITUDINAL DISTRIBUTION OF MIDGAP NATIVE DONOR CONCENTRATION IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTAL [J].

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OKADA, H ;

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[5]

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LIN, DG .

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[7] SEMICONDUCTING SEMIINSULATING REVERSIBILITY IN BULK GAAS [J].

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YU, PW ;

THEIS, WM ;

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LI, SS .

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[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[9] 2-DIMENSIONAL MICROSCOPIC UNIFORMITY OF RESISTIVITY IN SEMI-INSULATING GAAS [J].

MATSUMURA, T ;

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1182-1185

[10] IMPROVED UNIFORMITY OF RESISTIVITY DISTRIBUTION IN LEC SEMI-INSULATING GAAS PRODUCED BY ANNEALING [J].

OBOKATA, T ;

MATSUMURA, T ;

TERASHIMA, K ;

ORITO, F ;

KIKUTA, T ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L602-L605

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