Highly-efficient flat electron emitter of single-crystalline CVD diamond

被引：12

作者：

Nishimura, M ^{[1
]}

Ogawa, K ^{[1
]}

Hatta, A ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

关键词：

diamond films; diode; Fowler-Nordheim injection; ion implantation;

D O I：

10.1016/S0925-9635(98)00387-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, using chemically-vapor-deposited single-crystalline diamond for the central layers of the cold cathode, highly-efficient electron emitters with a kind of MIS (metal-insulator-semiconductor) structure have successfully been fabricated. The attained cathode efficiency (defined as the emission current divided by the current injected into the emitter) has significantly been Improved from 2%, previously reported for a polycrystalline diamond MIS emitter to > 10%, being almost independent of the amounts of the emission currents. The efficiency and the maximum currents obtained at 1100 V were sample-dependent and ranged from 14 to 100% and from 10(-11) to 10(-7) A, respectively. These clearly indicate that it is essential for an increase in the cathode efficiency of the diode-type diamond flat emitter to improve the crystalline quality of the central layers playing important roles in the electron injection and transportation processes. The emission mechanism is discussed on the basis of the emitter performance obtained. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：754 / 758

页数：5

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