Excitonic emissions from hexagonal GaN epitaxial layers

被引：165

作者：

Chichibu, S

Azuhata, T

Sota, T

Nakamura, S

机构：

[1] WASEDA UNIV, DEPT ELECT ENGN, SHINJUKU KU, TOKYO 169, JAPAN

[2] NICHIA CHEM IND LTD, DEPT RES & DEV, TOKUSHIMA 774, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.361110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Gamma(7c)) band to the A (Gamma(9v)) and B (Gamma(7uv)) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy k(B)T up to room temperature, which suggests the dominance of excitons in the PL spectra. (C) 1996 American Institute of Physics.

引用

页码：2784 / 2786

页数：3

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