Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

被引：139

作者：

Milojevic, M. ^{[1
]}

Aguirre-Tostado, F. S. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Kim, H. C. ^{[1
]}

Vogel, E. M. ^{[1
]}

Kim, J. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

关键词：

alumina; atomic layer deposition; gallium arsenide; III-V semiconductors; indium compounds; reduction (chemical); semiconductor-insulator boundaries; surface chemistry; X-ray photoelectron spectra;

D O I：

10.1063/1.3033404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction in III-V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS). TMA is found to reduce the interfacial oxides during the initial exposure. Concentrations of Ga oxide on the surface processed at 300 degrees C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPS.

引用

页数：3

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