High-performance 1.3-μm InAsP strained-layer quantum-well ACIS (Al-oxide confined inner stripe) lasers

被引：9

作者：

Iwai, N ^{[1
]}

Mukaihara, T ^{[1
]}

Yamanaka, N ^{[1
]}

Kumada, K ^{[1
]}

Shimizu, H ^{[1
]}

Kasukawa, A ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama Res & Dev Labs, Nishi Ku, Yokohama, Kanagawa 2200073, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1999年 / 5卷 / 03期

关键词：

aluminum compounds; epitaxial growth; gallium compounds; indium compounds; oxidation; quantum-well laser; ridge waveguides; semiconductor lasers;

D O I：

10.1109/2944.788437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated high-performance 1.3-mu m InAsP strained-layer quantum-well lasers with AI-oxide confined inner stripe (ACIS) structure. The oxidized layers are consisted of strain-compensated AlAs-InP-AlInAs (6 nm/2 ML/3 nm) superlattice (SAS) layers and grown on InP substrate using gas-source molecular beam epitaxy (GS-MBE), For the structural optimization of the ACIS laser, the dependence of quantum efficiency, threshold current and lateral mode characteristics on the initial ridge width and the current aperture width have been investigated. A very low-threshold current of 2.0 mA, a high differential quantum efficiency of 67% and stable single lateral mode operation of over 40 mW were obtained for the optimized ACIS lasers. The excellent characteristics obtained in the ACIS lasers are attributed to both the current and the optical confinements by the Al-oxide layer, In addition, we confirmed high uniformity of the threshold current and the oxidized width. This device is very promising candidate for low-cost access networks and optical interconnects.

引用

页码：694 / 700

页数：7

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