Formation of twinning-superlattice regions by artificial stacking of Si layers

被引:30
作者
Fissel, A
Bugiel, E
Wang, CR
Osten, HJ
机构
[1] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany
[2] Leibniz Univ Hannover, Inst Semicond Devices & Elect Mat, D-30167 Hannover, Germany
关键词
twinning; molecular beam epitaxy; superlattice; silicon;
D O I
10.1016/j.jcrysgro.2006.02.009
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report about the formation of twinning-superlattice regions in Si epitaxial layers grown by molecular beam epitaxy on Si(1 1 1)(root 3 x root 3)R30 degrees B surfaces. Twinning-superlattice regions were formed by periodical arrangement of 180 degrees rotation twin boundaries along [1 1 1]-direction and are only separated by a few nanometers. The preparation method consists of repeating several growth, boron-deposition and annealing cycles on boron-predeposited undoped Si substrates. It is shown that the amount of subsurface boron and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the Si(1 1 1)(root 3 x root 3)R30 degrees-surface covered by at least 1/3 ML boron results in the formation of 180 degrees rotation twins. The size of superlattice regions is restricted by surface morphology. However, the presented technology should also be suitable to prepare a new type of semiconductor heterostructure based on Si polytypes. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:392 / 397
页数:6
相关论文
共 31 条
[1]  
Baumhauer H, 1915, Z KRYSTALLOGR MINERA, V55, P249
[2]   HETEROCRYSTALLINE STRUCTURES - NEW TYPES OF SUPERLATTICES [J].
BECHSTEDT, F ;
KACKELL, P .
PHYSICAL REVIEW LETTERS, 1995, 75 (11) :2180-2183
[3]   SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON [J].
BEDROSSIAN, P ;
MEADE, RD ;
MORTENSEN, K ;
CHEN, DM ;
GOLOVCHENKO, JA ;
VANDERBILT, D .
PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1257-1260
[4]   ELECTRON-MICROSCOPE INVESTIGATION OF MICROPLASTIC DEFORMATION MECHANISMS OF SILICON BY INDENTATION [J].
EREMENKO, VG ;
NIKITENK.VI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :317-330
[5]   Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties [J].
Fissel, A .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2003, 379 (3-4) :149-255
[6]   STRUCTURE DETERMINATION OF THE SI(111) - B(SQUARE-ROOT-3 X SQUARE-ROOT-3)R 30-DEGREES SURFACE - SUBSURFACE SUBSTITUTIONAL DOPING [J].
HEADRICK, RL ;
ROBINSON, IK ;
VLIEG, E ;
FELDMAN, LC .
PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1253-1256
[7]   INFLUENCE OF SURFACE RECONSTRUCTION ON THE ORIENTATION OF HOMOEPITAXIAL SILICON FILMS [J].
HEADRICK, RL ;
WEIR, BE ;
BEVK, J ;
FREER, BS ;
EAGLESHAM, DJ ;
FELDMAN, LC .
PHYSICAL REVIEW LETTERS, 1990, 65 (09) :1128-1131
[8]   Twinned epitaxial layers formed on Si(111)√3x√3-B [J].
Hibino, H ;
Sumitomo, K ;
Ogino, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03) :1934-1937
[9]   Formation of twinned two-bilayer-high islands during initial stages of Si growth on Si(111)√3x√3-B [J].
Hibino, H ;
Ogino, T .
SURFACE SCIENCE, 1998, 412-13 :132-140
[10]   ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].
IKONIC, Z ;
SRIVASTAVA, GP ;
INKSON, JC .
PHYSICAL REVIEW B, 1993, 48 (23) :17181-17193