Performance enhancement of n-channel inversion type InxGa1-xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

被引：44

作者：

Sonnet, A. M. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Jivani, M. N. ^{[1
]}

Chapman, R. A. ^{[1
]}

Pollack, G. P. ^{[2
]}

Wallace, R. M. ^{[2
]}

Vogel, E. M. ^{[1
,2
]}

机构：

[1] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2991340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant enhancement in metal-oxide-semiconductor field effect transistor (MOSFET) transport characteristics is achieved with In(x)Ga(1-x)As (x = 0.53, x = 0.20) channel material using ex situ plasma enhanced chemical vapor deposited amorphous Si layer. In(x)Ga(1-x)As MOSFETs (L= 2 mu m, V(gs)-V(t) = 2.0 V) with Si interlayer show a maximum drain current of 290 mA/mm (x = 0.53) and 2 mu A/mm (x = 0.20), which are much higher compared to devices without a Si interlayer. However, charge pumping measurements show a lower average interface state density near the intrinsic Fermi level for devices without the silicon interlayer indicating that a reduction in the midgap interface state density is not responsible for the improved transport characteristics. (C) 2008 American Institute of Physics.

引用

页数：3

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