Improved Electrical Performance of MILC Poly-Si TFTs Using CF4 Plasma by Etching Surface of Channel

被引：14

作者：

Chang, Chih-Pang ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

CF4; plasma; metal-induced lateral crystallization (MILC); polycrystalline silicon thin-film transistors; THIN-FILM TRANSISTORS; INDUCED CRYSTALLIZATION; IMPLANTATION; DEGRADATION;

D O I：

10.1109/LED.2008.2010064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new manufacturing method for metal-induced lateral crystallization (MILC) polycrystalline silicon thin-film transistors (poly-Si TFTs) using CF4 plasma was proposed. It was found that CF4 plasma effectively minimizes the trap-state density by etching away the top surface of MILC and passivating the trap states, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, low leakage current, and high ON-/OFF-current ratio. CF4-Plasma MILC TFTs also possess high immunity against the hot-carrier stress and thereby exhibit better reliability than that of conventional MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal annealing step) and compatible with MILC TFT processes.

引用

页码：130 / 132

页数：3

共 16 条

[1] HOT-ELECTRON DEGRADATION OF N-CHANNEL POLYSILICON MOSFETS [J].

BANERJEE, S ;

SUNDARESAN, R ;

SHICHIJO, H ;

MALHI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :152-157

[2] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[3] Improved electrical characteristics and reliability of MILC poly-Si TFTs using fluorine-ion implantation [J].

Chang, Chih-Pang ;

Wu, YewChung Sermon .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (11) :990-992

[4] PHYSICAL MODELS FOR DEGRADATION EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

LEWIS, AG ;

WU, IW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :890-897

[5] Improving the electrical properties of NILC poly-Si films using a gettering substrate [J].

Hu, Chen-Ming ;

Wu, YewChung Sermon ;

Lin, Chi-Ching .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (11) :1000-1003

[6] Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers [J].

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :167-169

[7] Nickel induced crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Bhat, GA ;

Yeung, M ;

Kwok, HS ;

Wong, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :194-200

[8]

Lee HC, 1996, KOREA POLYM J, V4, P160

[9] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[10] High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications [J].

Meng, ZG ;

Wang, MX ;

Wong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :404-409

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