Formation of self-aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1-0.6 mu m oxide openings prepared by electron beam lithography

The self-aligned formation of CoSi2 was achieved on the selective epitaxial growth (SEG) silicon layer on (001) Si inside 0.1-0.6 mu m oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 degrees C with Si2H6. Self-aligned CoSi2 film without lateral growth of silicide was grown on the SEG Si layer by rapid thermal annealing at 700 degrees C in N-2 ambient. The successful integration of the self-aligned CoSi2 and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. (C) 1996 American Institute of Physics.