Platinum gettering in silicon by silicon phosphide precipitates

被引：17

作者：

Correia, A ^{[1
]}

Pichaud, B ^{[1
]}

Lhorte, A ^{[1
]}

Quoirin, JB ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,F-37001 TOURS,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.361040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The gettering efficiency process in platinum doped fast rectifiers was studied by transmission electron microscopy. We have observed orthorhombic PtSi-(monocrystalline) precipitates in n(+) gettering region with the following epitaxial relationship: (011)PtSi//{110}Si with [010]PtSi//[112]Si. This precipitation can be related to the presence of orthorhombic SiP particles induced by highly phosphorus doping, without any dislocations around them. (C) 1996 American Institute of Physics.

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页码：2145 / 2147

页数：3

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