Epitaxial growth and Ohmic contacts in MgxZn1-xO/TiN/Si(111) heterostructures

被引：3

作者：

Jin, Chunming ^{[1
,2
]}

Wei, Wei ^{[3
]}

Zhou, Honghui ^{[3
]}

Yang, Tsung-Han ^{[1
,2
]}

Narayan, Roger J. ^{[1
,2
]}

机构：

[1] Univ N Carolina, Joint Dept Biomed Engn, Chapel Hill, NC 27599 USA

[2] N Carolina State Univ, Chapel Hill, NC 27599 USA

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 25期

关键词：

buffer layers; electrodes; elemental semiconductors; II-VI semiconductors; magnesium compounds; ohmic contacts; pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor-insulator-semiconductor structures; silicon; titanium compounds; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction; zinc compounds;

D O I：

10.1063/1.3054347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the electronic properties of Mg0.1Zn0.9O/TiN/Si(111) heterostructures processed using pulsed laser deposition were examined. X-ray diffraction and transmission electron microscopy studies demonstrated epitaxial growth of the titanium nitride buffer layer and the Mg0.1Zn0.9O thin film. Transmission electron microscopy demonstrated a thin (similar to 5 nm) spinel layer along the magnesium zinc oxide/titanium nitride interface. Current-voltage measurements revealed Ohmic contact behavior through the magnesium zinc oxide/titanium nitride interface. These results suggest that the titanium nitride buffer layer in the MgxZn1-xO/TiN/Si(111) heterostructure provides a buffer layer for integrating magnesium zinc oxide thin films with silicon substrates, which both enable epitaxial growth and serve as an Ohmic electrode for the magnesium zinc oxide thin film.

引用

页数：3

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