New perspectives on NBTI in advanced technologies: Modelling & characterization

被引：15

作者：

Denais, M ^{[1
]}

Huard, V ^{[1
]}

Parthasarathy, C ^{[1
]}

Ribes, G ^{[1
]}

Perrier, F ^{[1
]}

Roy, D ^{[1
]}

Bravaix, A ^{[1
]}

机构：

[1] Crolles Alliance, F-38926 Crolles, France

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents new perspectives of the NBTI in advanced technology. Both modelling and characterization of NBTI are investigated for the maturation of the reliability management in advanced node technologies. A physical-based V-T instability model is presented considering interface trapped charges, fixed charges and oxide trapped holes effects. Finally, we discuss on the lifetime concept in the case of recoverable NBTI-induced degradation.

引用

收藏

页码：399 / 402

页数：4

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