Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices

被引：116

作者：

Froyen, S

Zunger, A

Mascarenhas, A

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 20期

关键词：

D O I：

10.1063/1.116346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the first-principles pseudopotential method we have calculated band offsets between ordered and disordered Ga0.5In0.5P and between ordered GaInP2 and GaAs. We find valence band offsets of 0.10 and 0.27 eV for the two interfaces with the valence band maximum on ordered GaInP2 and GaAs, respectively. Using experimental band gaps these offsets indicate that the ordered/disordered Ga0.5In0.5P interface has type I band alignment and that the ordered GaInP2/GaAs interface has type II alignment. Assuming transitivity of the band offsets, these results suggest a type I alignment between disordered Ga0.5In0.5P and GaAs and a transition from type I to type Il as the GaInP side becomes more ordered. Our calculations also show that ordered GaInP2 has a strong macroscopic electric polarization. This polarization will generate electric fields in inhomogeneous samples, strongly affecting the electronic properties of the material. (C) 1996 American Institute of Physics.

引用

页码：2852 / 2854

页数：3

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