Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy

被引：16

作者：

Hashimoto, T ^{[1
]}

Terakoshi, Y

Yuri, M

Ishida, M

Imafuji, O

Sugino, T

Itoh, K

机构：

[1] Matsushita Elect Corp, Elect Res Lab, Osaka 5691193, Japan

[2] Osaka Univ, Dept Elect Engn, Osaka 5650871, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.371276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of an amorphous oxynitride layer formed by nitridation are studied with x-ray photoelectron spectroscopy in order to reveal the role of nitridation before GaN growth in metalorganic chemical vapor deposition. The intensity variation of the N 1s peak with nitridation time is analyzed quantitatively using a diffusion-based model. The effective diffusion coefficient of nitrogen-related species in the amorphous layer is estimated to be 4x10(-18) cm(2)/s at 1000 degrees C. The thickness of the amorphous layer is on the order of monolayers because of this small diffusion coefficient. The nitrogen concentration in the layer, however, is as high as the order of the site density of O atoms on the sapphire surface. These characteristics imply that the role of the amorphous layer formed by nitridation is to modify surface energy with high-density N atoms rather than to form a buffer-like layer. (C) 1999 American Institute of Physics. [S0021-8979(99)08119-0].

引用

页码：3670 / 3675

页数：6

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