Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots

被引：3

作者：

Chen, YH

Jin, P

Ye, XL

Xu, B

Wang, ZG

Yang, Z

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 07期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2187419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using reflectance difference spectroscopy we have studied the in-plane optical anisotropy of GaAs surfaces covered by ultrathin InAs layers. The strain evolution of the GaAs surface with the InAs deposition thickness can be obtained. It is found that the optical anisotropy and the surface tensile strain attain maximum values at the onset of the formation of InAs quantum dots (QDs) and then decrease rapidly as more InAs QDs are formed with the increase of InAs deposition. The origin of the optical anisotropy has been discussed.

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页数：4

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