Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application

被引：30

作者：

Chen, SY ^{[1
]}

Sun, CL

Chen, SB

Chin, A

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1471937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the physical and electrical properties of Bi3.25La0.75Ti3O12 (BLT) thin films on Pt/Ti/SiO2/Si and on Al2O3(6 nm)/Si, which are used for one-transistor-one-capacitor and one-transistor ferroelectric memory, respectively. The BLT thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of 1.6 V at applied +/-10 V bias. However, the leakage current of BLT on Al2O3/Si at -100 kV/cm is two orders of magnitude lower than that on Pt. The comparable memory characteristics and much reduced leakage current of BLT on Al2O3/Si are the strong advantages as compared with BLT on Pt because it is directly related to switching energy and device scaling down. (C) 2002 American Institute of Physics.

引用

页码：3168 / 3170

页数：3

共 17 条

[1] Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes [J].

Bao, DH ;

Mizutani, N ;

Yao, X ;

Zhang, LY .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1041-1043

[2] Aging behavior and recovery of polarization in Sr0.8Bi2.4Ta2O9 thin films [J].

Chen, SY ;

Lee, VC .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3050-3055

[3] Effect of lead additive on the ferroelectric properties and microstructure of SrxPbyBi2zTa2O9 thin films [J].

Chen, SY ;

Lee, VC .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :8024-8030

[4] Stack gate PZT/Al2O3 one transistor ferroelectric memory [J].

Chin, A ;

Yang, MY ;

Sun, CL ;

Chen, SY .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (07) :336-338

[5] High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10Å [J].

Chin, A ;

Wu, YH ;

Chen, SB ;

Liao, CC ;

Chen, WJ .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :16-17

[6]

CHIN A, 1999, S VLSI, P135, DOI DOI 10.1109/VLSIT.1999.799380

[7] Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal-ferroelectric-insulator-semiconductor structure [J].

Choi, T ;

Kim, YS ;

Yang, CW ;

Lee, J .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1516-1518

[8] Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method [J].

Hou, Y ;

Xu, XH ;

Wang, H ;

Wang, M ;

Shang, SX .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1733-1735

[9] Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties [J].

Kim, SH ;

Kim, DJ ;

Maria, JP ;

Kingon, AI ;

Streiffer, SK ;

Im, J ;

Auciello, O ;

Krauss, AR .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :496-498

[10] Large remanent polarization of vanadium-doped Bi4Ti3O12 [J].

Noguchi, Y ;

Miyayama, M .

APPLIED PHYSICS LETTERS, 2001, 78 (13) :1903-1905

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