Effect of substrate doping on the (capacitance-voltage characteristics of strained-silicon pMOSFETs

被引：14

作者：

Chandrasekaran, K

Zhou, X

Ben Chiah, S

Shangguan, W

See, GH

Bera, LK

Balasubramanian, N

Rustagi, SC

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 63798, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 01期

关键词：

capacitance-voltage (C-V) characteristics; strained-silicon (s-Si); substrate doping; surface-channel MOSFET;

D O I：

10.1109/LED.2005.860886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of substrate doping on the capacitance-voltage characteristics of a surface-channel strained-silicon p-channel MOSFET has been studied to explain a measured anomalous behavior in which a "plateau" in the accumulation region was observed. It is found that this plateau is substrate doping dependent and it switches from a plateau on the inversion side to that on the accumulation side as the substrate doping increases. The physics behind this behavior has been explained by the one-dimensional Poisson solution and validated with numerical simulations and experimental data.

引用

页码：62 / 64

页数：3

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