The growth characteristics of (001) oriented diamond layers on (111) diamond face via bias-assisted chemical vapor deposition

被引：22

作者：

Zhang, WJ

Jiang, X

机构：

[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik (FhG-IST), D-38108 Braunschweig

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 16期

关键词：

D O I：

10.1063/1.116010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new phenomenon of diamond growth was observed. (001) oriented diamond layers can be grown on a (111) diamond face in a bias-assisted chemical vapor deposition process. The growth characteristics were investigated by means of scanning electron microscopy and Raman spectroscopy. It was found that, due to the ion bombardment, the epitaxial growth of the (111) diamond face was interrupted and a secondary nucleation occurred. This ion-bombardment-induced secondary nucleation leads to the growth of a top layer with a nonparallel orientation relationship with the substrate. (C) 1996 American Institute of Physics.

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页码：2195 / 2197

页数：3

相关论文

共 11 条

[1] DEPOSITION OF DIAMOND ON PATTERNED SILICON SUBSTRATES [J].

FLOTER, A ;

SCHAARSCHMIDT, G ;

MAINZ, B ;

LAUFER, S ;

DEUTSCHMANN, S ;

HINNEBERG, HJ .

DIAMOND AND RELATED MATERIALS, 1995, 4 (07) :930-935

[2] EXPERIMENTAL CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI [J].

GERBER, J ;

SATTEL, S ;

JUNG, K ;

EHRHARDT, H ;

ROBERTSON, J .

DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) :559-562

[3] ORIENTED CUBIC NUCLEATIONS AND LOCAL EPITAXY DURING DIAMOND GROWTH ON SILICON (100) SUBSTRATES [J].

JENG, DG ;

TUAN, HS ;

SALAT, RF ;

FRICANO, GJ .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :1968-1970

[4] HETEROEPITAXIAL DIAMOND GROWTH ON (100) SILICON [J].

JIANG, X ;

KLAGES, CP .

DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :1112-1113

[5]

JIANG X, 1996, IN PRESS APPL PHYS L, V68

[6] HETEROEPITAXIAL GROWTH OF SMOOTH AND CONTINUOUS DIAMOND THIN FILMS ON SILICON SUBSTRATES VIA HIGH-QUALITY SILICON-CARBIDE BUFFER LAYERS [J].

KAWARADA, H ;

SUESADA, T ;

NAGASAWA, H .

APPLIED PHYSICS LETTERS, 1995, 66 (05) :583-585

[7] CHARACTERIZATION OF THE BIAS NUCLEATION PROCESS [J].

KULISCH, W ;

SOBISCH, B ;

KUHR, M ;

BECKMANN, R .

DIAMOND AND RELATED MATERIALS, 1995, 4 (04) :401-405

[8] EVIDENCE OF AN ENERGETIC ION-BOMBARDMENT MECHANISM FOR BIAS-ENHANCED NUCLEATION OF DIAMOND [J].

MCGINNIS, SP ;

KELLY, MA ;

HAGSTROM, SB .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3117-3119

[9] ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES [J].

NARAYAN, J ;

SRIVATSA, AR ;

PETERS, M ;

YOKOTA, S ;

RAVI, KV .

APPLIED PHYSICS LETTERS, 1988, 53 (19) :1823-1825

[10] TEXTURED DIAMOND GROWTH ON (100) BETA-SIC VIA MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION [J].

STONER, BR ;

GLASS, JT .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :698-700