Design of GaN/AlGaN quantum wells for maximal intersubband absorption in 1.3 < λ < 2 μm wavelength range

被引：29

作者：

Jovanovic, V

Indjin, D

Ikonic, Z

Milanovic, V

Radovanovic, J

机构：

[1] Univ Leeds, Inst Microwaves & Photon, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

[2] Univ Belgrade, Fac Elect Engn, YU-11120 Belgrade, Yugoslavia

[3] Inst Phys, YU-11080 Belgrade, Yugoslavia

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 121卷 / 11期

关键词：

quantum wells; semiconductors; electron interaction;

D O I：

10.1016/S0038-1098(02)00036-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The design of rectangular GaN/AlGaN quantum wells for maximal intersubband absorption in the near infrared wavelength range 1.3-2 mum, on the 0 --> 1 electronic transition is considered, taking into account the effects of internal polarization fields and nonparabolicity. The nonlinear optimization method based on solving a system of nonlinear equations is employed in finding the structural parameters which give the maximal dipole matrix element while keeping the absorption peak at the desired wavelength. (C) 2002 Elsevier Science Ltd. All rights reserved.

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收藏

页码：619 / 624

页数：6

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