Chemistry at the graphene-SiO2 interface

被引:45
作者
Hossain, M. Zubaer [1 ]
机构
[1] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
关键词
PERFORMANCE; SIO2;
D O I
10.1063/1.3247964
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structure and energetics and the chemistry of graphene on SiO2 surface are studied from first-principles. It is found that the energetic preference for the graphene layer to bind on specific sites on the O-terminated surface differs substantially from that on the Si-terminated surface. Regardless of the location of binding sites on a particular surface, electrons transfer from the graphene layer to the dielectric surface and its quantity is higher for the O-terminated surface. In addition, the electron transfer strongly depends on the type of surface termination but is independent of the binding site. (C) 2009 American Institute of Physics. [doi:10.1063/1.3247964]
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页数:3
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