New planarisation process for low current, high-speed InP/InGaAs heterojunction bipolar transistors

被引：6

作者：

Willen, B

Mokhtari, M

Westergren, U

机构：

[1] Department of Electronics, Royal Institute of Technology, S-16440 Kista

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 03期

关键词：

heterojunction bipolar transistors; semiconductor devices;

D O I：

10.1049/el:19960154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low current, high-speed InP/InGaAs heterojunction bipolar transistors were fabricated using a silicon nitride based planarisation process. Realised devices offered cutoff frequencies of >100 GHz and a DC current gain of >50 at a collector current of only 2 mA. The best maximum frequency of oscillation was 195 GHz. It is also demonstrated that the new planarisation process offers a proper base for the fabrication of integrated circuits. These results increase the competitiveness of InP-based HBTs for high-speed, low power applications.

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收藏

页码：266 / 267

页数：2

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