Structural properties of ZnSe/GaAs(100) heterostructures with engineered band offsets

被引：13

作者：

Bratina, G

Vanzetti, L

Bonanni, A

Sorba, L

Paggel, JJ

Franciosi, A

Peluso, T

Tapfer, L

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

[2] IST NAZL FIS MAT,LAB TECNOL AVANZATE SUPERFICI & CATALISI,AREA RECH TRIESTE,I-34012 TRIESTE,ITALY

[3] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[4] PASTIS CNR & SVILUPPO MAT,I-72100 BRINDISI,ITALY

[5] CNR,IST ICMAT,I-00016 ROME,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(95)00820-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The band discontinuities in ZnSe-GaAs(100) heterostructures grown by molecular beam epitaxy depend on the local interface composition, We used a thin (20 Angstrom thick) composition control layer fabricated at the interface in Zn-rich or Se-rich conditions to control the band offsets for heterostructures in which the bulk of the II-VI epilayer was fabricated in stoichiometric growth conditions. Here we focus on the resulting variations in atomic interdiffusion across the interface, and on the local and long-range structural properties of the II-VI epilayer.

引用

页码：703 / 708

页数：6

共 11 条

[1] OPTIMIZATION OF INTERFACE PARAMETERS AND BULK PROPERTIES IN ZNSE-GAAS HETEROSTRUCTURES [J].