Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

被引：6

作者：

Bak-Misiuk, J

Misiuk, A

Zhuravlev, KS

Domagala, JZ

Adamczewska, J

Preobrazhenskii, VV

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[3] RAS, Inst Semicond Phys, Novosibirsk, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

GaAs : Be; high hydrostatic pressure; beryllium inclusion; X-ray;

D O I：

10.1016/S0921-4526(01)00812-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of beryllium doping on defect structure of the 1.5 mum thick GaAs: Be films grown by MBE on GaAs substrate as well as the effect of high temperature-high pressure treatment (HT-HP) on structural changes in that material were investigated by X-ray, electrical and SIMS methods. For As-grown GaAs:Be with Be concentration less than or equal to2.7 x 10(19) cm(-3), the Be doping-related decrease of lattice parameter, a, corresponded to that calculated from the Vegard law, accounting for the effect of holes on that parameter. For GaAs:Be with the higher Be concentration, a decrease of the a value was lower than that calculated. This effect can be explained assuming creation of Be inclusions. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：820 / 822

页数：3

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