Measurements of CFx and SiHx radicals in ECR and RF plasmas used for material processing

In material processing using plasmas, although radicals such as SiH3, SiH2, and CF3 are very important as precursors of thin film in CVD and protection film on the side wall in etching, their measurements in plasmas have never been made for the lack of measurement methods. We developed new laser spectroscopic techniques such as infrared diode laser absorption spectroscopy and modified laser induced fluorescence spectroscopy, and succeeded in making in-situ measurements of densities of CFx and SiHx radicals in plasmas used for etching and deposition for the first time. Those results are described in this review.